to-46 package npn phototransistor MID-40A22 description package dimensions the MID-40A22 is a npn silicon phototransistor mounted in a lensed, special dark plastic package. the lensing effect of the package allows an acceptance angle of 25 ?that measured from the optical axis to the half power point . features l wide range of collector current l lensed for high sensitivity l low cost plastic package l acceptance angle : 25 l good spectral matching ired ( l p 940 nm) type absolute maximum ratings @ t a =25 o c parameter maximum rating unit power dissipation 100 mw collector-emitter voltage 30 v emitter-collector voltage 5 v operating temperature range -55 o c to +100 o c storage temperature range -55 o c to +100 o c lead soldering temperature 260 o c for 5 seconds 12/4/2000 unity opto technology co., ltd. unit : mm ( inches ) 0.50 typ (.020) 5.46 (.215) 2.54 (.100) 4.75 (.187) 1.00min (.039) 25.00min (.984 ) 5.80 (.228) e c collector indicator 45 0.70 (.028) notes : 1. all dimensions are in inches (millimeters). 2. tolerance is .010" (0.25 mm) unless otherwise noted. 3. protruded resin under flange is .059" (1.5mm) max. 4. lead spacing is measured where the leads emerge from the package. 5. specifications are subject to change without notice.
MID-40A22 optical-electrical characteristics parameter test conditions symbol min. typ . max. unit collector-emitter i c =0.1ma breakdown voltage ee=0 emitter-collector ie=0.1ma breakdown voltage ee=0 collector-emitter i c =0.5ma saturation voltage ee=0.1mw/cm 2 rise time v cc =5v, r l =1k w tr 15 fall time i c =1ma tf 15 collector dark v ce =10v current ee=0 on state collector v ce =5v current ee=0.1mw/cm 2 typical optical-electrical characteristic curves 12/4/2000 na 100 @ t a =25 o c i c(on) 1 v ce(sat) 0.4 v 12/04/2000 m s i ceo ma v (br)ceo v v 30 5 v (br)eco 0 1 2 3 4 5 0 1 2 3 4 5 6 0.001 0.01 0.1 1 10 100 1000 0 40 80 120 unity opto technology co., ltd. ee - irradiance - mw/cm 2 fig.4 relative collector current vs irradiance t a - ambient temperature - o c fig.2 normalized collector current vs ambient temperature 0 40 80 120 160 200 0 2 4 6 8 10 iceo-collector dark current - m a t a - ambient temperature - o c fig.1 collector dark current vs ambient temperature 0 0.5 1 1.5 2 2.5 3 3.5 4 -75 -25 25 75 125 r l - load resistance - k w fig.3 rise and fall time vs load resistance i c normalized collector current tr tf rise and fall time - m s relative collector current 1.0 0.9 0.8 fig.5 sensitivity diagram relative sensitivity 0 10 20 0.5 0.3 0.1 0.2 0.4 0.6 30 40 90 70 60 50 80 vce = 5 v vce =5 v ee =0.1 mw/cm 2 @ l = 940 nm vcc = 5 v v rl = 1 v f = 100 hz pw = 1 ms
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